Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Absorption measurements using photothermal deflection spectroscopy were performed on a series of a-Si films with various levels of typical impurities to investigate their role in light-induced defect formation. It was found that at low concentrations (<5 at. %) the light-induced defect creation rate is independent of impurity concentration for oxygen, nitrogen, and carbon, which agrees with electron-spin-resonance results. © 1988 The American Physical Society.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
P. Alnot, D.J. Auerbach, et al.
Surface Science
Imran Nasim, Melanie Weber
SCML 2024
Lawrence Suchow, Norman R. Stemple
JES