Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Absorption measurements using photothermal deflection spectroscopy were performed on a series of a-Si films with various levels of typical impurities to investigate their role in light-induced defect formation. It was found that at low concentrations (<5 at. %) the light-induced defect creation rate is independent of impurity concentration for oxygen, nitrogen, and carbon, which agrees with electron-spin-resonance results. © 1988 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
P. Alnot, D.J. Auerbach, et al.
Surface Science
K.A. Chao
Physical Review B
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT