J.C. Marinace
JES
New measurements of the energy dependence of the photoionization cross section of the DX center in Si-doped AlxGa1-xAs are reported. With the use of a tunable infrared laser which provides sufficient light intensity in a very narrow wavelength range, the photoionization cross section has been measured over 68 orders of magnitude in samples with a variety of alloy compositions and doping concentrations. No measurable signal was observed for photon energies less than 0.8 eV. Data are analyzed in terms of a simple model which gives a value of 1.41.8 eV for the photoionization threshold energy. This energy is much larger than the DX-center binding energy, confirming that there is a large relaxation of the lattice when charge is captured at the DX center. The phonon mode involved in the lattice relaxation is found to be 5.5 meV. © 1988 The American Physical Society.
J.C. Marinace
JES
Ronald Troutman
Synthetic Metals
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997