Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
We elucidate the key chemical and physical requirements necessary for the future successful design and fabrication of molecular field-effect devices. We show that the molecular assembly, device fabrication, and electrical measurements of reported self-assembled monolayer field-effect transistors (SAMFETs) cannot be reproduced. Carrier tunneling and device electrostatics place minimum molecular lengths of L > 2.5-3 nm and minimum gate dielectric thickness tdielectric ≤ L/1.5 for such devices. In conflict with reported SAMFET device characteristics, for the values of L and t dielectric in these structures, it is fundamentally impossible to either turn the devices off or to obtain a significant field-effect. Synthesis, assembly, and characterization of functionalized molecular systems and fabrication and characterization of appropriately scaled device structures may enable the successful preparation of a molecular field-effect transistor.
Imran Nasim, Melanie Weber
SCML 2024
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
P. Alnot, D.J. Auerbach, et al.
Surface Science
A. Gangulee, F.M. D'Heurle
Thin Solid Films