The resilience wall: Cross-layer solution strategies
Subhasish Mitra, Pradip Bose, et al.
VLSI-TSA 2014
Negative-bias temperature instability (NBTI) of the threshold voltage in ultrathin HfO2 p-type field-effect transistors (pFET) with tungsten gates is reported. The dependence of threshold voltage, transconductance peak, and interface trap density on stress time is investigated for various negative stress voltages and temperatures. The measurements show that the threshold voltage shifts with a concomitant decrease in transconductance peak and increase in interface trap density as assessed by subthreshold slope and dc current-voltage (DCIV) method. The threshold voltage shift data are fitted with a stretched exponential equation and the fits are used for estimating lifetime. The measurements show that NBTI-related degradation in HfO2 stacks is comparable to that observed in SiO2/poly Si pFETs.
Subhasish Mitra, Pradip Bose, et al.
VLSI-TSA 2014
Ernest Y. Wu, Baozhen Li, et al.
IPFA 2015
Miaomiao Wang, Sufi Zafar, et al.
Microelectronic Engineering
Siddarth Krishnan, Vijay Narayanan, et al.
IRPS 2012