Conference paper
Conference paper
Evaluation of material profiles for III-V nanowire photodetectors
Abstract
In this paper we report the simulation-based design of experiment (DoE) study for three different types of III-V based pin photodetectors operating at various wavelengths. Our DoE work shows that the optimal configuration for each device is strongly determined by the wavelength at which we are aiming to operate the photodetector and that a trade-off exists between low dark current and high photocurrent. Heterostructure devices provide the optimum performance in particular for longer wavelengths.
Related
Conference paper
Metal-Clad InP Cavities for Nanolasers on Si
Conference paper