Conference paper
Stress-driven segregation at a Si-Ge alloy surface
J. Tersoff, P.C. Kelires
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
We calculate the equilibrium morphology of an epitaxial strained layer which wets the substrate (Stranski-Krastanow growth), in a two-dimensional continuum model. The layer coalesces into a single discrete island, with zero contact angle to the film wetting the substrate. Small islands have a minimum width, and hence an arbitrarily small aspect ratio. Very large coherent islands have a shape that approaches a ball sitting atop the wetting layer. © 1997 The American Physical Society.
J. Tersoff, P.C. Kelires
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
J. Tersoff, F. Legoues
Physical Review Letters
J. Tersoff
Applied Surface Science
S. Mukherjee, E. Pehlke, et al.
Physical Review B