Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
This letter presents a proof-of-concept process for tunable, self-limiting growth of ultrathin epitaxial NiSi2 films on Si (100). The process starts with metal sputter-deposition, followed by wet etching and then silicidation. By ionizing a fraction of the sputtered Ni atoms and biasing the Si substrate, the amount of Ni atoms incorporated in the substrate after wet etching can be controlled. As a result, the thickness of the NiSi2 films is increased from 4.7 to 7.2 nm by changing the nominal substrate bias from 0 to 600 V. The NiSi2 films are characterized by a specific resistivity around 50 cm. © 2011 The Electrochemical Society.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
R. Ghez, J.S. Lew
Journal of Crystal Growth
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
A. Krol, C.J. Sher, et al.
Surface Science