O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Lanthanum aluminate (LAO) films were grown epitaxially on Si (001) by atomic layer deposition (ALD) using a buffer layer of strontium titanate (STO) grown by molecular beam epitaxy. The ALD growth of LAO was done at 250°C by using tris(N,N′-diisopropylformamidinate)-lanthanum, trimethylaluminum, and water as co-reactants. Reflection high-energy electron diffraction, X-ray diffraction and transmission electron microscopy were used to determine film crystallinity. The as-deposited LAO films were amorphous and became crystalline after vacuum annealing at 600°C for 2 h. In-situ X-ray photoelectron spectroscopy (XPS) was used to characterize the LAO/STO/Si interfaces at various stages throughout the growth and annealing process. XPS analysis showed minimal Si-O bonding at the STO/Si interface after the ALD process and after post-deposition annealing at 600°C for 2 h. The results demonstrate a method to integrate epitaxial LAO films on Si (001) substrates by ALD. © 2012 Elsevier B.V. All rights reserved.
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
A. Krol, C.J. Sher, et al.
Surface Science
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997