D.J. Dimaria
Japanese Journal of Applied Physics
The enhancement of electron injection into silicon dioxide layers using a metal-granular metal film-SiO2-silicon structure is reported for Al, Ni, and Mo-SiO2 cermets. This enhancement was found to be stronger for higher metal to oxide ratios. The I-V characteristic curves for these structures follow the Fowler-Nordheim tunneling mechanism behavior, indicating that the dominant effect is an enhancement of the electric field near the granular film-SiO2 interface.
D.J. Dimaria
Japanese Journal of Applied Physics
D.J. Dimaria
Applied Physics Letters
S.R. Brorson, D.W. Dong, et al.
IEEE Electron Device Letters
P.C. Arnett, D.J. Dimaria
Journal of Applied Physics