J. Batey, S.L. Wright, et al.
Journal of Applied Physics
Electroluminescence emission from indium-tin-oxide (ITO) and indium oxide films incorporated in a Si-rich SiO2-SiO2-ITO (In 2O3) multiple-layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In 2O3. The intensity of the light is found to depend on the applied electric field.
J. Batey, S.L. Wright, et al.
Journal of Applied Physics
A.D. Marwick, D.A. Buchanan, et al.
MRS Proceedings 1992
D.J. Dimaria, P.C. Arnett
Applied Physics Letters
D.J. Dimaria
Microelectronic Engineering