Jerzy Kanicki, M. Osama Aboelfotoh, et al.
ICPS Physics of Semiconductors 1984
Paper
Energy level of the nitrogen dangling bond in amorphous silicon nitride
Abstract
The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.
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