R. Rodríguez, J.H. Stathis, et al.
IEEE Electron Device Letters
We show that silicon dangling bonds with different nearest-neighbor configurations and energy levels can be resolved by electron spin resonance (ESR) in silicon nitride. Using an in situ bias technique on large-area metal-nitride-silicon structures, we demonstrate that the ESR line in Si-rich nitride consists of an inhomogeneous distribution of discrete components at different g values. We show that trapping of holes occurs at a site with a g value of 2.0052 corresponding to a pure Si environment, while electron trapping occurs at a site with a g value of 2.0028, corresponding to a pure N environment.
R. Rodríguez, J.H. Stathis, et al.
IEEE Electron Device Letters
B.P. Linder, J.H. Stathis
INFOS 2003
R.T. Collins, M.A. Tischler, et al.
Applied Physics Letters
R. Rodríguez, J.H. Stathis, et al.
IEEE Electron Device Letters