U. Meirav, M.A. Kastner, et al.
Physical Review B
A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1-xAs heterojunctions. We have found for x<0.4 that Δ Ec≅0.62 Δ Eg, where Δ Eg is the band-gap difference. For x>0.4, the apparent Δ Ec is considerably smaller.
U. Meirav, M.A. Kastner, et al.
Physical Review B
T.P. Smith III, F. Fang, et al.
Physical Review B
M.I. Nathan, F. Holtzberg, et al.
Physical Review Letters
M. Heiblum, M.I. Nathan, et al.
Solid-State Electronics