Steven E. Steen, Douglas LaTulipe, et al.
Microelectronic Engineering
We present a figure summarizing the variation of conduction band discontinuity, valence band discontinuity, and gold Schottky barrier height for binary and ternary III-V semiconductors. This figure, which applies to unstrained material, makes use of the property of transitivity in band alignments, and the observed experimental correlation between barrier heights and band gap discontinuities, to consolidate a wide range of data. The figure should be very useful in the design of novel heterostructure electronic and optical devices.
Steven E. Steen, Douglas LaTulipe, et al.
Microelectronic Engineering
Lan Wei, David J. Frank, et al.
NSTI-Nanotech 2011
Ramachandran Muralidhar, Jin Cai, et al.
IEEE T-ED
Madhu Padmanabha Sumangala, Ahish Shylendra, et al.
IEEE Electron Device Letters