Conference paper
SRAM Cell Design for Stability Methodology
Clement Wann, Robert Wong, et al.
VLSI Technology 2005
We present a figure summarizing the variation of conduction band discontinuity, valence band discontinuity, and gold Schottky barrier height for binary and ternary III-V semiconductors. This figure, which applies to unstrained material, makes use of the property of transitivity in band alignments, and the observed experimental correlation between barrier heights and band gap discontinuities, to consolidate a wide range of data. The figure should be very useful in the design of novel heterostructure electronic and optical devices.
Clement Wann, Robert Wong, et al.
VLSI Technology 2005
Brian A. Bryce, B. Robert Ilic, et al.
Applied Physics Letters
Sandip Tiwari, David J. Frank
IEEE T-ED
Anna W. Topol, Douglas C. La Tulipe Jr., et al.
IBM J. Res. Dev