Oki Gunawan, Tayfun Gokmen, et al.
PVSC 2015
Admittance spectra and drive-level-capacitance profiles of several high performance Cu 2ZnSn(Se,S) 4 (CZTSSe) solar cells with bandgap ∼1.0-1.5 eV are reported. In contrast to the case for Cu(In,Ga)(S,Se) 2, the CZTSSe capacitance spectra exhibit a dielectric freeze out to the geometric capacitance plateau at moderately low frequencies and intermediate temperatures (120-200 K). These spectra reveal important information regarding the bulk properties of the CZTSSe films, such as the dielectric constant and a dominant acceptor with energy level of 0.13-0.2 eV depending on the bandgap. This deep acceptor leads to a carrier freeze out effect that quenches the CZTSSe fill factor and efficiency at low temperatures. © 2012 American Institute of Physics.
Oki Gunawan, Tayfun Gokmen, et al.
PVSC 2015
Oki Gunawan, Tayfun Gokmen, et al.
PVSC 2012
Yun Seog Lee, Talia S. Gershon, et al.
Advanced Energy Materials
Daehan Kim, Gee Yeong Kim, et al.
Journal of Physical Chemistry C