Byungha Shin, Kejia Wang, et al.
PVSC 2011
Admittance spectra and drive-level-capacitance profiles of several high performance Cu 2ZnSn(Se,S) 4 (CZTSSe) solar cells with bandgap ∼1.0-1.5 eV are reported. In contrast to the case for Cu(In,Ga)(S,Se) 2, the CZTSSe capacitance spectra exhibit a dielectric freeze out to the geometric capacitance plateau at moderately low frequencies and intermediate temperatures (120-200 K). These spectra reveal important information regarding the bulk properties of the CZTSSe films, such as the dielectric constant and a dominant acceptor with energy level of 0.13-0.2 eV depending on the bandgap. This deep acceptor leads to a carrier freeze out effect that quenches the CZTSSe fill factor and efficiency at low temperatures. © 2012 American Institute of Physics.
Byungha Shin, Kejia Wang, et al.
PVSC 2011
Stener Lie, Mario Indra Sandi, et al.
Sol Energ Mater Sol Cells
Tayfun Gokmen, Wilfried Haensch
Frontiers in Neuroscience
Wei Liu, David B. Mitzi, et al.
Chemistry of Materials