PaperElectroluminescence and lasing action in GaAsxP1-xM.H. Pilkuhn, H. RupprechtJournal of Applied Physics
PaperThe Effect of Deep Levels due to Copper on the Optical and Electrical Properties of GaAs p-n JunctionsM.H. Pilkuhn, H. RupprechtIEEE T-ED
PaperDefect structure in the alkali gallate fast ion conductorsM.P. Anderson, L.M. Foster, et al.Solid State Ionics
PaperHigh-energy light emission from junctions in GaAsxP 1-x diodesN.G. Ainslie, M.H. Pilkuhn, et al.Journal of Applied Physics
