J. Appenzeller, M. Radosavljević, et al.
Physical Review Letters
The fabrication of electronic devices based on single-walled nitride nanotubes (BNNT) was discussed. The gate-induced barrier modulation was observed in vertically scaled devices, resulting in field-effect transistor operation. The devices showed an exponentially increasing current (Id) with the applied voltage bias (Vds) up to 35 V at room temperature.
J. Appenzeller, M. Radosavljević, et al.
Physical Review Letters
J. Knoch, M. Zhang, et al.
Applied Physics A: Materials Science and Processing
J. Appenzeller, R. Martel, et al.
Microelectronic Engineering
H. Stahl, J. Appenzeller, et al.
Materials Science and Engineering C