J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
A previous investigation revealed that during annealing at high temperatures a CoSi2/polysilicon bilayer breaks down, resulting in an inverted bilayer structure because of silicon grain growth and cobalt redistribution. The present paper is devoted to the electrical effects of the observed phenomena. MOS capacitors were subjected to heat treatments in the range 750-900°C prior to the evaluation of breakdown statistics. The electrical results were compared with Rutherford backscattering spectrometry. It is concluded that the effects on gate oxide integrity are slight and reproducible even after partial inversion of the bilayer structure. © 1993.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992