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Applied Physics Letters
Paper

Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy

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Abstract

Using a high-performance optoelectronic THz beam system for time-domain spectroscopy, we have measured the absorption and index of refraction of N- and P-type doped GaAs from low frequencies to 4 THz. From these measurements the complex conductance was obtained over the same frequency range. All of the results were well fit by Drude theory.

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Applied Physics Letters

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