P. Alnot, D.J. Auerbach, et al.
Surface Science
Transport in Nb/AlOx/Nb junctions involves two parallel channels, barrier defects (pinholes) with sub-nanometer dimensions and nearly-ideal tunneling regions. We fit junction characteristics using only a single parameter, the ratio of the normal state conductances of these current paths. Our barrier model accounts for the excellent Josephson behavior and highly non-ideal quasiparticle characteristics of junctions with critical current densities as high as 4 mA/µm2. It appears to be quite generally applicable to tunnel junctions. © 1995 IEEE
P. Alnot, D.J. Auerbach, et al.
Surface Science
T.N. Morgan
Semiconductor Science and Technology
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters