B. Welber, C. Lanza
Opto-electronics
Numerical calculations have been made of the effect of grain size on the short-circuit current and the AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells. Si cells 10 µm thick are at best 8 percent efficient for 100-µm grain sizes; 25-µm-thick Si cells can be about 10 percent efficient for this grain size. GaAs cells 2 µm thick can be 12 percent efficient for grain sizes of 3 µm or greater. © 1977 IEEE. All rights reserved.
B. Welber, C. Lanza
Opto-electronics
A. Paccagnella, A.C. Callegari, et al.
IEEE T-ED
G. Cheroff, C. Lanza, et al.
Review of Scientific Instruments
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987