E. T. Ryan, Deepika Priyadarshini, et al.
IITC/MAM 2015
The addition of a low frequency RF (LFRF) component during plasma-enhanced chemical vapor deposition of porous SiCOH ultra low-κ films allowed for the incorporation of higher carbon content without lowering the Young's modulus or increasing the dielectric constant. The porous SiCOH films typically contain carbon bonded into the silica matrix primarily as Si(CH3)x species. The low frequency RF increased the total carbon content by adding CH2 and -CH = CH- species with some reduction of Si(CH 3)x species. It also altered the SiOx bonding structure by increasing network SiOx bonding at the expense of the suboxide, indicating an increase in SiOx crosslink density. Although higher carbon content usually lowers the modulus of porous SiCOH films, the modulus of the higher carbon films generated by LFRF did not decrease because of their increased network SiOx bonding. © 2014 AIP Publishing LLC.
E. T. Ryan, Deepika Priyadarshini, et al.
IITC/MAM 2015
Markus Brink, Isaac Lauer, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Takeshi Nogami, M. Chae, et al.
IITC/AMC 2014
Deepika Priyadarshini, Son Van Nguyen, et al.
IITC/AMC 2016