S.J. Wind, Y. Taur, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Effect of liner thickness on electromigration lifetime
Abstract
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.