E. Liniger, T.M. Shaw, et al.
Microelectronic Engineering
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
E. Liniger, T.M. Shaw, et al.
Microelectronic Engineering
D. Moy, M. Schadt, et al.
VMIC 1989
I.C. Noyan, E. Liniger, et al.
MRS Spring Meeting 1996
C.-K. Hu, J.M.E. Harper
VLSI-TSA 1997