Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

Positive-ion bombardment of substrates in rf diode glow discharge sputtering

J.W. Coburn, Eric Kay

Journal of Applied Physics

Paper

Plasma-assisted etching of tungsten films: A quartz-crystal microbalance study

F. Fracassi, J.W. Coburn

Journal of Applied Physics

Paper

Plasma etching a "pseudo-black-box" approach

Harold F. Winters, J.W. Coburn, et al.

Journal of Applied Physics

Paper

Mechanisms in plasma-assisted etching

J.W. Coburn

Physica Scripta

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Abstract

Related

Positive-ion bombardment of substrates in rf diode glow discharge sputtering

Plasma-assisted etching of tungsten films: A quartz-crystal microbalance study

Plasma etching a "pseudo-black-box" approach

Mechanisms in plasma-assisted etching