Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

H atom reactions with GaAs 〈001〉

Mei-Chen Chuang, J.W. Coburn

Journal of Applied Physics

Conference paper

Role of ions in reactive ion etching

J.W. Coburn

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Paper

Plasma Sources in Analytical Mass Spectrometry

J.W. Coburn, W.W. Harrison

Applied Spectroscopy Reviews

Paper

Positive-ion bombardment of substrates in rf diode glow discharge sputtering

J.W. Coburn, Eric Kay

Journal of Applied Physics

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Abstract

Related

H atom reactions with GaAs 〈001〉

Role of ions in reactive ion etching

Plasma Sources in Analytical Mass Spectrometry

Positive-ion bombardment of substrates in rf diode glow discharge sputtering