Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
A discussion is presented of the current status of pattern transfer in microfabrication. Additive methods are summarized briefly and emphasis is placed on dry etching methods employing either rf glow discharges or wide-area ion beams, namely: glow discharge sputter etching, plasma etching, reactive ion etching, ion milling, reactive ion beam etching and chemically assisted ion milling. A summary of the etching mechanisms is given and some of the factors which should be considered when selecting a dry etching process are summarized. © 1986.
T.N. Morgan
Semiconductor Science and Technology
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Lawrence Suchow, Norman R. Stemple
JES