P.L. McEuen, E.B. Foxman, et al.
Physical Review Letters
Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 17 cm-3, provides the only explanation for the observed transport and single particle relaxation times.
P.L. McEuen, E.B. Foxman, et al.
Physical Review Letters
M. Heiblum, M.I. Nathan, et al.
Solid-State Electronics
A. Palevski, M. Heiblum, et al.
IEEE T-ED
M. Heiblum, A. Palevski, et al.
Surface Science