J.H. Stathis, R. Bolam, et al.
INFOS 2005
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
P. Alnot, D.J. Auerbach, et al.
Surface Science
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Hiroshi Ito, Reinhold Schwalm
JES