I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
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MRS Fall Meeting 2020