Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Self-diffusion measurements have been made in polycrystalline Au-1.2 at.% Ta alloy over the temperature range 204°-395.5 °C using 195Au radioactive tracer and r.f. backsputtering techniques for serial sectioning. Self-diffusion coefficients were obtained in the lattice, dislocation networks (subgrains) and large angle grain boundaries and these yielded Arrhenius parameters for the three diffusion processes. A small addition of Ta to Au was found to have profound effects on Au diffusion in the lattice and along grain boundaries. © 1975.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
T.N. Morgan
Semiconductor Science and Technology