Early mask results of KRS-XE and current progress in improving sensitivity and etch resistance

Abstract

KRS-XE is a chemically amplified resist developed to enable electron-beam lithography for mask making at the 100 nm node. This material has been shown to provide an excellent process window for mask manufacturing at this node. Characterization of this material using both 50 keV raster and 75 keV vector scan e-beam exposure systems will be presented. A higher sensitivity version of this material has been developed specifically for a vector, shaped beam 50 keV application. Initial mask manufacturing results for this higher sensitivity version of KRS-XE will be presented for 75 keV. In addition, recent developments using KRS-XE formulations modified to achieve high sensitivity and improved etch resistance will be discussed.