Publication
Applied Physics Letters
Paper

Drain voltage scaling in carbon nanotube transistors

View publication

Abstract

The effect of drain voltage scaling on the turn-on behavior of carbon nanotube (CNT) transistors was studied. The decrease in oxide thickness was found to improve the turn-on behavior. Scaling was employed to avoid an exponential increase in off-current with drain voltage, arising due to the schottky barriers modulation at both the source and drain contact.

Date

Publication

Applied Physics Letters

Authors

Share