G. Arjavalingam, G. Hougham, et al.
Polymer
We demonstrate a novel technique for enhancing metal-semiconductor-metal photodetector bandwidths without reducing responsivity. We have observed bandwidth increases of up to 10 GHz from control to enhanced photodetectors which corresponds to about 70% enhancement. This technique involves modifying the internal electric field structure, by introducing a buried n-type doped layer that is completely depleted, to reduce the relatively long hole transit time. © 1991 IEEE
G. Arjavalingam, G. Hougham, et al.
Polymer
B. Yang, J. Schaub, et al.
IEEE Photonics Technology Letters
L. Schares, C.L. Schow, et al.
ECOC 2005
W. Robertson, G. Arjavalingam, et al.
QELS 1992