G. Arjavalingam, Yvon Pastol, et al.
IEEE Trans Antennas Propag
We demonstrate a novel technique for enhancing metal-semiconductor-metal photodetector bandwidths without reducing responsivity. We have observed bandwidth increases of up to 10 GHz from control to enhanced photodetectors which corresponds to about 70% enhancement. This technique involves modifying the internal electric field structure, by introducing a buried n-type doped layer that is completely depleted, to reduce the relatively long hole transit time. © 1991 IEEE
G. Arjavalingam, Yvon Pastol, et al.
IEEE Trans Antennas Propag
J. Schaub, S.M. Csutak, et al.
LEOS 2002
W. Robertson, G. Arjavalingam, et al.
IEEE Microwave and Guided Wave Letters
J.H. Burroughes
ECOC 1990