G. Dehlinger, S.J. Koester, et al.
IEEE Photonics Technology Letters
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
G. Dehlinger, S.J. Koester, et al.
IEEE Photonics Technology Letters
J. Schaub, D. Kuchta, et al.
OFC 2001
B. Yang, J. Schaub, et al.
LEOS 2002
S.J. Koester, L. Schares, et al.
ECS Meeting 2006