Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Transitions from the ground states of Si, Te, and S donors associated with the lowest X conduction band have been observed to excited donor states associated with the next-higher X conduction band as well as transitions into the higher band. The X3c-X1c interband energy is found to be 355 ± 3 meV with the conductivity effective mass in the higher band being (0.14±0.02)m0. © 1971 The American Physical Society.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
J.A. Barker, D. Henderson, et al.
Molecular Physics
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP