Distortion of masks for x-ray lithography

R.E. Acosta; J.R. Maldonado; R. Fair; R. Viswanathan; A.D. Wilson

doi:10.1016/0167-9317(85)90076-0

Microelectronic Engineering

Paper

01 Jan 1985

Distortion of masks for x-ray lithography

View publication

Abstract

Experimental and theoretical results are presented on the determination of distortion induced during the process of fabrication of X-ray lithography masks. The studies were performed on B-doped Si and on B-N-H mask substrates. © 1985.

Paper

Light-coupling masks: An alternative, lensless approach to high-resolution optical contact lithography

Heinz Schmid, Hans Biebuyck, et al.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Paper

Anomalous large grains in alloyed aluminum thin films I. Secondary grain growth in aluminum-copper films

A. Gangulee, F.M. D'Heurle

Thin Solid Films

Paper

The boundary contour method for three-dimensional linear elasticity

A. Nagarajan, S. Mukherjee, et al.

Journal of Applied Mechanics, Transactions ASME

Conference paper

Growth and transport properties of multilayer superconducting films of Nd_1.83Ce_0.17CuO_x / YBa₂Cu₃O_7-δ

A. Gupta, R. Gross, et al.

SPIE Advances in Semiconductors and Superconductors 1990

View all publications

Abstract

Related

Light-coupling masks: An alternative, lensless approach to high-resolution optical contact lithography

Anomalous large grains in alloyed aluminum thin films I. Secondary grain growth in aluminum-copper films

The boundary contour method for three-dimensional linear elasticity

Growth and transport properties of multilayer superconducting films of Nd1.83Ce0.17CuOx / YBa2Cu3O7-δ

Growth and transport properties of multilayer superconducting films of Nd_1.83Ce_0.17CuO_x / YBa₂Cu₃O_7-δ