J.A. Barker, D. Henderson, et al.
Molecular Physics
We review the use of dislocation modeling as a practical tool in the development of semiconducting devices. Areas of application include calculation of single dislocation behavior in transistors and memory cells, large-scale simulations of relaxation in SiGe/Si and SiGe/SOI layer systems, and investigation of dislocation nucleation at stress concentrators. Current capabilities and case studies for each are reviewed, and areas where further progress is needed are identified. © 2005 Elsevier B.V. All rights reserved.
J.A. Barker, D. Henderson, et al.
Molecular Physics
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