Conference paper
True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
We review the use of dislocation modeling as a practical tool in the development of semiconducting devices. Areas of application include calculation of single dislocation behavior in transistors and memory cells, large-scale simulations of relaxation in SiGe/Si and SiGe/SOI layer systems, and investigation of dislocation nucleation at stress concentrators. Current capabilities and case studies for each are reviewed, and areas where further progress is needed are identified. © 2005 Elsevier B.V. All rights reserved.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
J.H. Stathis, R. Bolam, et al.
INFOS 2005