Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Dhdelectric characteristics were determined for a microstructurally anisotropic borosilicate glass prepared by uniaxiallhd stretching phase‐separated glass rods. The specimen showed a dielectric loss peak caused by the inhomogeneous microstructure; its magnitude varied with the orientation of the specimen with respect to the electric field direction. The results are in agreement with Sillars’ theory. Copyright © 1981, Wiley Blackwell. All rights reserved
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Frank Stem
C R C Critical Reviews in Solid State Sciences
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications