Saibal Mukhopadhyay, Keunwoo Kim, et al.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Ultrathin-body fully depleted silicon-on-insulator (UTB FD/SOI) devices have emerged as a possible candidate in sub-45-nm technologies and beyond. This paper analyzes leakage and stability of FD/SOI 6T SRAM cell and presents a device design and optimization strategy for low-power and stable SRAM applications. We show that large variability and asymmetry in threshold-voltage distribution due to random dopant fluctuation (RDF) significantly increase leakage spread and degrade stability of FD/SOI SRAM cell. We propose to optimize FD devices using thinner buried oxide (BOX) structure and lower body doping combined with negative back-bias or workfunction engineering in reducing the RDF effect. Our analysis shows that thinner BOX and cooptimization of body doping and back biasing are efficient in designing low-power and stable FD/SOI SRAM cell in sub-45-nm nodes. © 2008 IEEE.
Saibal Mukhopadhyay, Keunwoo Kim, et al.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Niladri Narayan Mojumder, Saibal Mukhopadhyay, et al.
VTS 2008
Keunwoo Kim, Jente B. Kuang, et al.
IEEE International SOI Conference 2008
Jae-Joon Kim, Rahul Rao, et al.
ICICDT 2008