Development of graphene FETs for high frequency electronics

Abstract

Recent advances in fabricating, measuring, and modeling of top-gated graphene FETs for high-frequency electronics are reviewed. By improving the oxide deposition process and reducing series resistance, an intrinsic cut-off frequency as high as 50 GHz is achieved in a 350-nm-gate graphene FET at a drain bias of 0.8 V. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOSFETs at the same gate length, illustrating the potential of graphene for RF applications. © 2009 IEEE.