J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
This paper focuses on using the resist contrast curve as a method for pre-screening resists for attenuated phase-shift mask contact hole applications. The importance of surface inhibition and high c-value in developing PSM C/H resists is revealed. These concepts are confirmed by lithographic evaluation. A good overall process window (without sidelobe printing) is demonstrated by such high c-value resists.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Sung Ho Kim, Oun-Ho Park, et al.
Small