J.C. Marinace
JES
One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 °C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. Oncurrent density (0.02 A/cm2) and on/off-current ratio (4 × 102) were obtained in the junction annealed at 300 °C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples. © 2013 Elsevier B.V. All rights reserved.
J.C. Marinace
JES
T.N. Morgan
Semiconductor Science and Technology
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999