Takashi Ando, Pouya Hashemi, et al.
IEEE Electron Device Letters
Symmetric lateral NPN bipolar junction transistors on Si-on-insulator having epitaxially grown emitter/collector regions are demonstrated, for the first time. A novel notch-assisted epitaxy scheme has been developed using faceted Si epitaxial (epi) layers as reactive-ion-etch mask to expose the vertical intrinsic-base epi-seeding surfaces and the epi emitter and collector are automatically connected to the extension regions for metal contact and/or for electrical probing. Functional transistors with good quality device I-V characteristics were obtained with post-epi rapid thermal annealing. The results suggest a path forward for devices suitable for low-cost THz electronics applications. Some learning about the fabrication, as revealed from measured device characteristics, are discussed.
Takashi Ando, Pouya Hashemi, et al.
IEEE Electron Device Letters
Jin Cai, Tak H. Ning, et al.
IEDM 2011
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Jared B. Hertzberg, Eric J. Zhang, et al.
npj Quantum Information