A. Khakifirooz, Kangguo Cheng, et al.
VLSI Technology 2012
Surface-channel strained-Ge (s-Ge) p-MOSFETs with high-K/metal gate stack and ozone surface passivation are fabricated, for the first time. The channel is ultrathin (∼3-6 nm thick) s-Ge (∼2.2%, biaxial compression) epitaxially grown on a relaxed Si 0.56Ge 0.44 virtual substrate. Split capacitance-voltage measurements along with quantum-mechanical simulations demonstrate a capacitance-equivalent thickness of 1.3 nm and sub-1-nm equivalent oxide thickness. The effective hole mobility of these devices was extracted and exhibits 3 × and 2.2 × mobility enhancement over universal Si hole mobility, for s-Ge channel thicknesses of ∼6 and ∼ 3 nm, respectively. © 2012 IEEE.
A. Khakifirooz, Kangguo Cheng, et al.
VLSI Technology 2012
Guohan Hu, Jonathan Sun, et al.
IEDM 2021
Winston Chern, Pouya Hashemi, et al.
ECSSMEQ 2014
G. Hu, C. Safranski, et al.
IEDM 2022