Guo-Jun Qi, Charu Aggarwal, et al.
IEEE TPAMI
When the dielectric constant of an insulator in an interconnect is reduced, mechanical properties are often compromised, giving rise to significant challenges in interconnect integration and reliability. Due to low adhesion of the dielectric an interfacial crack may occur during fabrication and testing. To understand the effect of interconnect structure, an interfacial fracture mechanics model has been analyzed for patterned films undergoing a typical thermal excursion during the integration process. It is found that the underlayer pattern generates a driving force for delamination and changes the mode mixity of the delamination. The implications of our findings to interconnect processes and reliability testing have been discussed. © 2006 Elsevier Ltd. All rights reserved.
Guo-Jun Qi, Charu Aggarwal, et al.
IEEE TPAMI
Jonathan Ashley, Brian Marcus, et al.
Ergodic Theory and Dynamical Systems
Timothy J. Wiltshire, Joseph P. Kirk, et al.
SPIE Advanced Lithography 1998
Jianke Yang, Robin Walters, et al.
ICML 2023