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The use of a dedicated chamber to perform pre-epi deposition cleaning allows native oxide removal with a low thermal budget, and significantly improves throughput of low-temperature Si and SiGe applications. Wafers processed in the cleaning chamber show no detectable contaminants, and the cleansed surface is actually significantly smoother because of cleaning down to a sub-angstrom level.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
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SPIE Advanced Lithography 2008
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