A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
The use of a dedicated chamber to perform pre-epi deposition cleaning allows native oxide removal with a low thermal budget, and significantly improves throughput of low-temperature Si and SiGe applications. Wafers processed in the cleaning chamber show no detectable contaminants, and the cleansed surface is actually significantly smoother because of cleaning down to a sub-angstrom level.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
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