Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors

Abstract

Capacitors incorporating both "wet"-type and "dry"-type thermal silicon dioxide films have been characterized electrically and chemically. Under electron avalanche injection conditions, these films exhibited the complex oxide bulk and oxide-silicon interface charging behavior previously observed. Secondary ion mass spectrometry measurements on these capacitors showed that avalanche electron injection also results in redistribution of hydrogen species within the oxide films. These results are discussed in the context of a previously-proposed model for interface trap and interface charge generation. In this model, bulk oxide trapping centers are treated as precursors for mobile hydrogen species and consequently for interface traps. The model is partially successful in describing the measured data. © 1984.