Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
An analytical model for trapping-state photodepopulation measurements in conductor-thin-film-insulator-conductor structures is presented. The external-circuit-current dependence on applied voltage is determined, and it is shown that moments of the spatial distribution of trapped charge in the insulator can be extracted from collected-charge versus applied-field characteristic curves. The photodepopulation technique is compared with more widely used differential-capacitance and phtoemission-current techniques. © 1974 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
K.A. Chao
Physical Review B
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990