Critical angles for channeling of boron ions implanted into single-crystal silicon

Abstract

A substantially improved estimate of the critical angles for boron ion channeling in single-crystal silicon is reported. The ZBL Si-B specific ‘interatomic potential has been used for the critical angle calculations because the universal potentials significantly overestimate the potential at larger interatomic separations. The new results are of significant importance in that they indicate that the critical angles are much smaller than the previously reported results which were based on the Thomas-Fermi potential. These new results are well supported by experimental observations of the distributions of boron implanted into single-crystal silicon. © 1991, The Electrochemical Society, Inc. All rights reserved.