PaperAn In0.15 Ga0.85 As/GaAs Pseudomorphic Single Quantum Well HEMTJ.J. Rosenberg, M. Benlamri, et al.IEEE Electron Device Letters
PaperV-6 A Method for the Prevention of the Formation of Dark-Line and Dark-Spot Defects in GaAlAs Double Heterostructure LasersJ.A. Van Vechten, J.M. Blum, et al.IEEE T-ED
PaperTunneling spectroscopy of midgap states induced by arsenic precipitates in low-temperature-grown GaAsR.M. Feenstra, A. Vaterlaus, et al.Applied Physics Letters
PaperPhonon shifts and strains in strain-layered (Ga1-xIn x)AsGerald Burns, C.R. Wie, et al.Applied Physics Letters