R.J.S. Bates, D. Kuchta, et al.
Optical and Quantum Electronics
High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1-xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is obtained using conventional alloyed AuGeNi contacts.
R.J.S. Bates, D. Kuchta, et al.
Optical and Quantum Electronics
D. Kuchta, C.J. Mahon
IEEE Photonics Technology Letters
D. Kuchta, R.P. Schneider
IEE/LEOS Summer Topical Meetings 1994
Joong-ho Choi, D.L. Rogers, et al.
OFC 1996