B. Pezeshki, D. Kuchta, et al.
CLEO 1996
High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1-xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is obtained using conventional alloyed AuGeNi contacts.
B. Pezeshki, D. Kuchta, et al.
CLEO 1996
C.L. Schow, F.E. Doany, et al.
OFC 2007
L. Schares, X.J. Zhang, et al.
OFC 2009
S.J. Koester, B.-U. Klepser, et al.
DRC 1998