Herwig Hahn, Veeresh Deshpande, et al.
IEDM 2017
We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k·p and non-parabolic effective mass models. Parameter sets for the non-parabolic Γ, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0.53Ga0.47As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III-V semiconductor band structure calculation methods and calibrated band parameters for device simulations.
Herwig Hahn, Veeresh Deshpande, et al.
IEDM 2017
Roberto Grassi, Tony Low, et al.
DRC 2012
Roberto Grassi, Tony Low, et al.
IEEE T-ED